BF422
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- Mfr.Part #
- BF422
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.05A TO92
- Stock
- 24,567
- In Stock ：
- 24,567
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 60MHz
- Collector Emitter Voltage (VCEO) :
- 250V
- Emitter Base Voltage (VEBO) :
- 5V
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Element Configuration :
- Single
- Frequency :
- 60MHz
- Power Dissipation :
- 830mW
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 250V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Max Collector Current :
- 50mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Type :
- Through Hole
- hFE Min :
- 50
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2005
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 240
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 50mA
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- Voltage - Rated DC :
- 250V
- Base Part Number :
- BF422
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 830mW
- Gain Bandwidth Product :
- 60MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 250V
- Packaging :
- Bulk
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- Datasheets
- BF422
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF422 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 60MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
BF422 Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF422 Applications
There are a lot of ON Semiconductor
BF422 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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