BSR33TA
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- Mfr.Part #
- BSR33TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89-3
- Stock
- 19,555
- In Stock ：
- 19,555
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 4.5mm
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Collector Emitter Saturation Voltage :
- -500mV
- Current Rating :
- -1A
- Operating Temperature :
- -65°C~150°C TJ
- Max Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Terminations :
- 3
- hFE Min :
- 50
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Power Dissipation :
- 1W
- Base Part Number :
- BSR33
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -1A
- Package / Case :
- TO-243AA
- Width :
- 2.5mm
- JESD-30 Code :
- R-PSSO-F3
- Pbfree Code :
- No
- Termination :
- SMD/SMT
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 90V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -80V
- Max Collector Current :
- 1A
- Weight :
- 51.993025mg
- Collector Emitter Voltage (VCEO) :
- 80V
- Qualification Status :
- Not Qualified
- Height :
- 1.5mm
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Factory Lead Time :
- 14 Weeks
- Datasheets
- BSR33TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BSR33TA Overview
DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BSR33TA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
BSR33TA Applications
There are a lot of Diodes Incorporated
BSR33TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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