BST61,115
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- Mfr.Part #
- BST61,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 1A SOT89
- Stock
- 4,171
- In Stock ：
- 4,171
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Polarity :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-F3
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.3W
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP - Darlington
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.3V
- Transition Frequency :
- 200MHz
- Max Power Dissipation :
- 1.3W
- Base Part Number :
- BST61
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Frequency - Transition :
- 200MHz
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 60V
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 50nA
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Datasheets
- BST61,115
PNP - Darlington 150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BST61,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.3V @ 500μA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
BST61,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BST61,115 Applications
There are a lot of Nexperia USA Inc.
BST61,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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