BSV52,215
- Mfr.Part #
- BSV52,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BSV52 - SMALL SIGNAL BI
- Stock
- 11,290
- In Stock :
- 11,290
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 400nA ICBO
- Current - Collector (Ic) (Max) :
- 100mA
- Number of Elements :
- 1
- Power - Max :
- 250mW
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Turn On Time-Max (ton) :
- 10ns
- Terminal Form :
- Gull wing
- Frequency - Transition :
- 500MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Pin Count :
- 3
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Published :
- 2009
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- VCEsat-Max :
- 0.4 V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Series :
- Automotive, AEC-Q101
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 500MHz
- Turn Off Time-Max (toff) :
- 20ns
- Collector-Base Capacitance-Max :
- 4pF
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Base Part Number :
- BSV52
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Datasheets
- BSV52,215

NPN 150°C TJ 400nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSV52,215 Overview
This device has a DC current gain of 40 @ 10mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 500MHz.Collector Emitter Breakdown occurs at 12VV - Maximum voltage.
BSV52,215 Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 500MHz
BSV52,215 Applications
There are a lot of Nexperia USA Inc.
BSV52,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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