BUL1203EFP
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- Mfr.Part #
- BUL1203EFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 550V 5A TO220-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 1.2kV
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Voltage (VCEO) :
- 550V
- hFE Min :
- 10
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- BUL1203
- JESD-609 Code :
- e3
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 550V
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 36W
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 9 @ 2A 5V
- Max Collector Current :
- 5A
- Power Dissipation :
- 36W
- JESD-30 Code :
- R-PSFM-T3
- Current - Collector Cutoff (Max) :
- 100μA
- Reach Compliance Code :
- not_compliant
- Datasheets
- BUL1203EFP
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
BUL1203EFP Overview
In this device, the DC current gain is 9 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
BUL1203EFP Features
the DC current gain for this device is 9 @ 2A 5V
the vce saturation(Max) is 1.5V @ 1A, 3A
the emitter base voltage is kept at 9V
BUL1203EFP Applications
There are a lot of STMicroelectronics
BUL1203EFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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