BUL45D2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Operating Temperature :

-65°C~150°C TJ

Frequency :

13MHz

Polarity/Channel Type :

NPN

Packaging :

Tube

Weight :

4.535924g

Voltage - Rated DC :

700V

Collector Emitter Breakdown Voltage :

400V

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Max Collector Current :

5A

Transition Frequency :

13MHz

Length :

10.28mm

Transistor Type :

NPN

Gain Bandwidth Product :

13MHz

Published :

2001

Number of Terminations :

3

Factory Lead Time :

2 Weeks

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation :

75W

Collector Base Voltage (VCBO) :

700V

Package / Case :

TO-220-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 1V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Contact Plating :

Tin

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Base Part Number :

BUL45

Emitter Base Voltage (VEBO) :

12V

Number of Elements :

1

Mounting Type :

Through Hole

Radiation Hardening :

No

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 2A

Max Power Dissipation :

75W

Collector Emitter Voltage (VCEO) :

400V

Current Rating :

5A

Surface Mount :

No

Collector Emitter Saturation Voltage :

460mV

Height :

9.28mm

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100μA

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Width :

4.82mm

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

22