BUL45D2

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

75W

hFE Min :

22

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tube

Weight :

4.535924g

Collector Emitter Saturation Voltage :

460mV

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 2A

Factory Lead Time :

2 Weeks

Length :

10.28mm

Transistor Type :

NPN

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

400V

Radiation Hardening :

No

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 1V

Operating Temperature :

-65°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

700V

Height :

9.28mm

Collector Emitter Voltage (VCEO) :

400V

Number of Terminations :

3

Max Power Dissipation :

75W

Contact Plating :

Tin

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Polarity/Channel Type :

NPN

Pin Count :

3

Current Rating :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Width :

4.82mm

Current - Collector Cutoff (Max) :

100μA

Element Configuration :

Single

Number of Pins :

3

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

12V

Frequency :

13MHz

Voltage - Rated DC :

700V

Base Part Number :

BUL45

Published :

2001

Gain Bandwidth Product :

13MHz

Max Collector Current :

5A

Transition Frequency :

13MHz

Number of Elements :

1

Surface Mount :

No

Pbfree Code :

yes