BUL742A

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Mfr.Part #
BUL742A
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220
Stock
16,857
In Stock :
16,857

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
12V
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
1.5V
Voltage - Rated DC :
400V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
hFE Min :
10
Base Part Number :
BUL742
Current - Collector Cutoff (Max) :
250μA
JESD-30 Code :
R-PSFM-T3
Max Collector Current :
4A
Collector Base Voltage (VCBO) :
950V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Terminal Finish :
Matte Tin (Sn)
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
16 @ 800mA 3V
Polarity/Channel Type :
NPN
Mount :
Through Hole
Operating Temperature :
150°C TJ
Number of Terminations :
3
Package / Case :
TO-220-3
JEDEC-95 Code :
TO-220AB
Lead Free :
Contains Lead
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Breakdown Voltage :
400V
Element Configuration :
Single
Mounting Type :
Through Hole
JESD-609 Code :
e3
Current Rating :
4A
Pin Count :
3
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Power Dissipation :
70W
Transistor Application :
SWITCHING
Reach Compliance Code :
not_compliant
Packaging :
Tube
Datasheets
BUL742A
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL742A from Xinshop,where excellence meets affordability. This product stands out with its Base Part Number:BUL742, Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, BUL742A pinout, BUL742A datasheet PDF, BUL742A amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL742A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL742A


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL742A Overview


In this device, the DC current gain is 16 @ 800mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 3.5A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).Maximum collector currents can be below 4A volts.

BUL742A Features


the DC current gain for this device is 16 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 12V
the current rating of this device is 4A


BUL742A Applications


There are a lot of STMicroelectronics
BUL742A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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