CPH6123-TL-E
- Mfr.Part #
- CPH6123-TL-E
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A 6CPH
- Stock
- 3,208
- In Stock :
- 3,208
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Factory Lead Time :
- 11 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 1.3W
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 100mA, 2A
- Collector Emitter Saturation Voltage :
- -240mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Number of Pins :
- 6
- Width :
- 1.6mm
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 3A
- Base Part Number :
- CPH6123
- Element Configuration :
- Single
- Pin Count :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Height :
- 900μm
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Transition Frequency :
- 390MHz
- Number of Terminations :
- 6
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 390MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- -6V
- Published :
- 2003
- JESD-609 Code :
- e6
- Max Frequency :
- 390MHz
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- -50V
- Datasheets
- CPH6123-TL-E

PNP 150°C TJ 1μA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
CPH6123-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -240mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 390MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
CPH6123-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 650mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 390MHz
CPH6123-TL-E Applications
There are a lot of ON Semiconductor
CPH6123-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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