DCP69-16-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Number of Pins :

4

Length :

6.5mm

Gain Bandwidth Product :

200MHz

Power Dissipation :

1W

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

25V

Emitter Base Voltage (VEBO) :

-5V

Pbfree Code :

yes

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

3.5mm

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 1V

Pin Count :

4

Number of Elements :

1

Collector Emitter Saturation Voltage :

-500mV

Transition Frequency :

200MHz

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1W

Published :

2007

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

Frequency :

200MHz

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

20V

Weight :

7.994566mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

20V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Height :

1.6mm

Case Connection :

COLLECTOR

Element Configuration :

Single

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Base Part Number :

DCP69

Terminal Position :

Dual

Max Collector Current :

1A

Factory Lead Time :

19 Weeks

RoHS Status :

ROHS3 Compliant