DMC2038LVTQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

14 Weeks

Feedback Cap-Max (Crss) :

100 pF

JESD-30 Code :

R-PDSO-G6

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 1.8V Drive

Published :

2013

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

35m Ω @ 4A, 4.5V, 74m Ω @ 3A, 4.5V

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Terminations :

6

FET Type :

N and P-Channel Complementary

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 4.5V, 10nC @ 4.5V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.035Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 10V 705pF @ 10V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

3.7A

Terminal Position :

Dual

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power - Max :

800mW Ta

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta 2.6A Ta