DNBT8105-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Max Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Pins :

3

Width :

1.3mm

Height :

1mm

Lead Free :

Lead Free

Max Collector Current :

1A

Radiation Hardening :

No

Terminal Position :

Dual

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

60V

Gain Bandwidth Product :

150MHz

JESD-609 Code :

e3

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Current Rating :

1A

Collector Emitter Saturation Voltage :

500mV

Length :

2.9mm

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Weight :

7.994566mg

Frequency :

150MHz

Collector Base Voltage (VCBO) :

80V

hFE Min :

30

Transistor Application :

SWITCHING

Factory Lead Time :

15 Weeks

Transition Frequency :

150MHz

Collector Emitter Voltage (VCEO) :

60V

Power Dissipation :

300mW

Published :

2008

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 5V

Transistor Type :

NPN

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Additional Feature :

High Reliability

Element Configuration :

Single

Mount :

Surface Mount

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA

Max Power Dissipation :

600mW

Base Part Number :

DNBT8105

Pin Count :

3