DSC200100L
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- Mfr.Part #
- DSC200100L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A MINI3
- Stock
- 146,251
- In Stock ：
- 146,251
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Transistor Type :
- NPN
- hFE Min :
- 210
- RoHS Status :
- RoHS Compliant
- Max Frequency :
- 150MHz
- Height :
- 1.1mm
- Factory Lead Time :
- 10 Weeks
- Terminal Form :
- Flat
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100μA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- ECCN Code :
- EAR99
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- 300mV
- Element Configuration :
- Single
- HTS Code :
- 8541.21.00.75
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Base Part Number :
- DSC2001
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- REACH SVHC :
- Unknown
- Gain Bandwidth Product :
- 150MHz
- Packaging :
- Cut Tape (CT)
- Continuous Collector Current :
- 100mA
- Max Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 200mW
- Published :
- 2009
- Width :
- 1.5mm
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Datasheets
- DSC200100L
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
DSC200100L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
DSC200100L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
DSC200100L Applications
There are a lot of Panasonic Electronic Components
DSC200100L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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