DXT2012P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500mA, 5A

Continuous Collector Current :

-5.5A

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

60V

Power Dissipation :

3.2W

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

5.5A

Package / Case :

PowerDI™ 5

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 1V

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

100V

Mount :

Surface Mount

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Transition Frequency :

120MHz

Radiation Hardening :

No

Number of Pins :

5

Gain Bandwidth Product :

120MHz

Mounting Type :

Surface Mount

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

3.2W

Weight :

95.991485mg

Published :

2012

Element Configuration :

Single

Number of Terminations :

3

Terminal Form :

Flat

Number of Elements :

1

Collector Emitter Saturation Voltage :

-250mV

Pin Count :

4

Factory Lead Time :

15 Weeks

Frequency :

120MHz

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F3

Collector Emitter Voltage (VCEO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-7V

Base Part Number :

DXT2012P5

Max Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

20nA ICBO

Manufacturer Package Identifier :

POWERDI-5

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3