DXT2013P5-13
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- Mfr.Part #
- DXT2013P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A POWERDI5
- Stock
- 16,738
- In Stock ：
- 16,738
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 140V
- Gain Bandwidth Product :
- 125MHz
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PDSO-F3
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Case Connection :
- COLLECTOR
- Frequency :
- 125MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Weight :
- 95.991485mg
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- -7V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -340mV
- Number of Pins :
- 5
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Pin Count :
- 4
- Power Dissipation :
- 3.2W
- Max Collector Current :
- 5A
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 3.2W
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- PowerDI™ 5
- Collector Emitter Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Base Part Number :
- DXT2013P5
- Transition Frequency :
- 125MHz
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Continuous Collector Current :
- -5A
- Datasheets
- DXT2013P5-13
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2013P5-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DXT2013P5-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 125MHz
DXT2013P5-13 Applications
There are a lot of Diodes Incorporated
DXT2013P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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