FCX555TA
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- Mfr.Part #
- FCX555TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 180V 0.7A SOT89-3
- Stock
- 15,351
- In Stock ：
- 15,351
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PSSO-F3
- Transistor Type :
- PNP
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -400mV
- Max Breakdown Voltage :
- 180V
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- -180V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Width :
- 2.5mm
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 25mA, 250mA
- Weight :
- 51.993025mg
- Package / Case :
- TO-243AA
- Terminal Finish :
- Matte Tin (Sn)
- Power - Max :
- 2.1W
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Emitter Breakdown Voltage :
- 180V
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- FCX555
- Max Power Dissipation :
- 2.1W
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -7V
- Voltage - Rated DC :
- -180V
- Current Rating :
- -700mA
- Max Collector Current :
- 700mA
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.5mm
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Lead Free :
- Lead Free
- Height :
- 1.5mm
- Factory Lead Time :
- 15 Weeks
- Published :
- 2006
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- FCX555TA
PNP -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
FCX555TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 25mA, 250mA.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -700mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 180V volts.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.
FCX555TA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 25mA, 250mA
the emitter base voltage is kept at -7V
the current rating of this device is -700mA
a transition frequency of 100MHz
FCX555TA Applications
There are a lot of Diodes Incorporated
FCX555TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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