FDB86135

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Width :

9.65mm

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

120A

Weight :

1.31247g

Number of Pins :

3

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Published :

2017

Pbfree Code :

yes

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

704A

Number of Elements :

1

Rise Time :

54ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

Additional Feature :

ULTRA LOW-ON RESISTANCE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Length :

10.67mm

Threshold Voltage :

2V

Peak Reflow Temperature (Cel) :

245

JESD-609 Code :

e3

Height :

4.83mm

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

658 mJ

Turn On Delay Time :

22 ns

Power Dissipation :

227W

Turn-Off Delay Time :

37 ns

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 75A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2.4W Ta 227W Tc

Mount :

Surface Mount

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

75A

Fall Time (Typ) :

11 ns

Mounting Type :

Surface Mount

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON