FDC3535

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Weight :

36mg

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 40V

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

3.1ns

Turn-Off Delay Time :

23 ns

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Turn On Delay Time :

6.5 ns

Nominal Vgs :

-1.6 V

Mounting Type :

Surface Mount

Length :

3mm

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Pbfree Code :

yes

Fall Time (Typ) :

2.9 ns

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

80V

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

SOT-23-6 Thin, TSOT-23-6

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation-Max :

1.6W Ta

Feedback Cap-Max (Crss) :

40 pF

Rds On (Max) @ Id, Vgs :

183m Ω @ 2.1A, 10V

Series :

PowerTrench®

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Width :

1.7mm

Published :

2017

Drain to Source Breakdown Voltage :

-80V

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

-2.1A

Terminal Finish :

Tin

Threshold Voltage :

-1.6V

Power Dissipation :

1.6W

FET Type :

P-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Mode :

ENHANCEMENT MODE

Height :

1.1mm

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Number of Channels :

1

Number of Pins :

6

Mount :

Surface Mount