FDFS2P102A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

182pF @ 10V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

10A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 5V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

3.3A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

DS Breakdown Voltage-Min :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

125m Ω @ 3.3A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

FET Feature :

Schottky Diode (Isolated)

Series :

PowerTrench®

Qualification Status :

Not Qualified

Pin Count :

8

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Power Dissipation-Max :

900mW Ta

Drain-source On Resistance-Max :

0.125Ohm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

3.3A Ta

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.29.00.95