FDFS6N303
- Mfr.Part #
- FDFS6N303
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6A 8SOIC
- Stock
- 10,513
- In Stock :
- 10,513
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Schottky Diode (Isolated)
- FET Type :
- N-Channel
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 30V
- JESD-30 Code :
- R-PDSO-G8
- Drain-source On Resistance-Max :
- 0.035Ohm
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- Qualification Status :
- COMMERCIAL
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Pulsed Drain Current-Max (IDM) :
- 30A
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 15V
- Pin Count :
- 8
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Surface Mount :
- yes
- Power Dissipation-Max :
- 900mW Ta
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 6A, 10V
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 6A
- Transistor Application :
- SWITCHING
- Datasheets
- FDFS6N303

N-Channel Tape & Reel (TR) 35m Ω @ 6A, 10V ±20V 350pF @ 15V 17nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDFS6N303 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 6A.There is a peak drain current of 30A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDFS6N303 Features
based on its rated peak drain current 30A.
a 30V drain to source voltage (Vdss)
FDFS6N303 Applications
There are a lot of Rochester Electronics, LLC
FDFS6N303 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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