FDG312P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

JESD-609 Code :

e3

Voltage - Rated DC :

-20V

Published :

1999

Transistor Application :

SWITCHING

Current Rating :

-1.2A

Operating Temperature :

-55°C~150°C TJ

Resistance :

180mOhm

Turn On Delay Time :

7 ns

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Weight :

28mg

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.2A, 4.5V

Width :

1.25mm

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Lead Free :

Lead Free

Radiation Hardening :

No

Threshold Voltage :

900mV

Factory Lead Time :

10 Weeks

Continuous Drain Current (ID) :

1.2A

Length :

2mm

Power Dissipation :

750mW

Number of Pins :

6

Power Dissipation-Max :

750mW Ta

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Gull wing

Series :

PowerTrench®

Number of Terminations :

6

Pbfree Code :

yes

Turn-Off Delay Time :

16 ns

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Height :

1mm

FET Type :

P-Channel

Rise Time :

12ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

12 ns