FDG315N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Published :

2000

Terminal Form :

Gull wing

Turn-Off Delay Time :

7 ns

Rds On (Max) @ Id, Vgs :

120m Ω @ 2A, 10V

JESD-609 Code :

e3

Rise Time :

11ns

Power Dissipation-Max :

750mW Ta

Nominal Vgs :

1.8 V

Number of Pins :

6

Terminal Position :

Dual

Pbfree Code :

yes

Height :

1mm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

2A

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Weight :

28mg

Threshold Voltage :

1.8V

Width :

1.25mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Resistance :

120mOhm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

30V

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

750mW

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 5V

Factory Lead Time :

10 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

20V

Length :

2mm

Vgs (Max) :

±20V

FET Type :

N-Channel

Number of Terminations :

6

Dual Supply Voltage :

30V

Element Configuration :

Single

Series :

PowerTrench®

Current Rating :

2A

Drain Current-Max (Abs) (ID) :

2A

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

Fall Time (Typ) :

11 ns

Turn On Delay Time :

3 ns

Mounting Type :

Surface Mount