FDG6321C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

500mA

Mount :

Surface Mount

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Resistance :

450mOhm

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

25V

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Contact Plating :

Tin

Radiation Hardening :

No

Height :

1.1mm

Current Rating :

500mA

FET Type :

N and P-Channel

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Fall Time (Typ) :

8 ns

Drain Current-Max (Abs) (ID) :

0.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Lead Free :

Lead Free

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Weight :

28mg

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Power Dissipation :

300mW

Number of Terminations :

6

Number of Elements :

2

Threshold Voltage :

800mV

Current - Continuous Drain (Id) @ 25°C :

500mA 410mA

Max Junction Temperature (Tj) :

150°C

Published :

2017

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

8ns

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

55 ns