FGA30N65SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Field Stop

Pbfree Code :

yes

Width :

5mm

Gate Charge :

87nC

Collector Emitter Saturation Voltage :

2.29V

Height :

20.1mm

JESD-609 Code :

e3

Number of Elements :

1

Number of Terminations :

3

Gate-Emitter Thr Voltage-Max :

6V

Turn On Time :

41 ns

Td (on/off) @ 25°C :

14ns/102ns

Test Condition :

400V, 30A, 6 Ω, 15V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Through Hole

Switching Energy :

716μJ (on), 208μJ (off)

ECCN Code :

EAR99

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

35ns

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 30A

Transistor Application :

POWER CONTROL

Element Configuration :

Single

Factory Lead Time :

5 Weeks

Collector Emitter Breakdown Voltage :

650V

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

650V

Turn Off Time-Nom (toff) :

125 ns

Weight :

6.401g

Package / Case :

TO-3P-3, SC-65-3

Published :

2012

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Packaging :

Tube

Current - Collector Pulsed (Icm) :

90A

Max Collector Current :

60A

Input Type :

Standard

Max Power Dissipation :

300W

Radiation Hardening :

No

Length :

16.2mm

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

Power Dissipation :

300W