FJAF4210RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

-10A

Factory Lead Time :

6 Weeks

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Power Dissipation :

80W

hFE Min :

50

Number of Elements :

1

Transistor Type :

PNP

Published :

2017

Lead Free :

Lead Free

Gain Bandwidth Product :

30MHz

Frequency :

30MHz

Collector Emitter Saturation Voltage :

-500mV

Polarity/Channel Type :

PNP

Package / Case :

TO-3P-3 Full Pack

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

-6V

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Weight :

6.962g

Transistor Element Material :

SILICON

Mount :

Through Hole

Transition Frequency :

30MHz

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

10μA ICBO

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

140V

Packaging :

Tube

Collector Emitter Breakdown Voltage :

140V

Radiation Hardening :

No

Max Power Dissipation :

80W

Pbfree Code :

yes

JESD-609 Code :

e3

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

10A

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 3A 4V

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 500mA, 5A

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

-200V

Voltage - Rated DC :

-140V