FJB102TM
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- Mfr.Part #
- FJB102TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A D2PAK
- Stock
- 13,611
- In Stock ：
- 13,611
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Current Rating :
- 8A
- Mount :
- Surface Mount
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 200
- Weight :
- 1.31247g
- Power Dissipation :
- 80W
- Max Collector Current :
- 8A
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2014
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 80W
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Voltage - Rated DC :
- 100V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 2V
- Max Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Base Part Number :
- FJB102
- Current - Collector Cutoff (Max) :
- 50μA
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Datasheets
- FJB102TM
NPN - Darlington 150°C TJ 50μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
FJB102TM Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 8A volts.
FJB102TM Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
FJB102TM Applications
There are a lot of ON Semiconductor
FJB102TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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