FJB3307DTM
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- Mfr.Part #
- FJB3307DTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A D2PAK
- Stock
- 6,670
- In Stock ：
- 6,670
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.83mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Length :
- 10.67mm
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- FJB3307
- Collector Base Voltage (VCBO) :
- 700V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Weight :
- 1.31247g
- Max Frequency :
- 1MHz
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 400V
- Terminal Finish :
- Tin (Sn)
- Max Breakdown Voltage :
- 400V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Published :
- 2012
- Emitter Base Voltage (VEBO) :
- 9V
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.72W
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 1.72W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Width :
- 9.65mm
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 3V
- Transistor Element Material :
- SILICON
- hFE Min :
- 8
- Collector Emitter Voltage (VCEO) :
- 400V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Collector Current :
- 8A
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Gull wing
- Datasheets
- FJB3307DTM
NPN 150°C TJ 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
FJB3307DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.
FJB3307DTM Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
FJB3307DTM Applications
There are a lot of ON Semiconductor
FJB3307DTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJB3307DTM | Fairchild Semiconductor | 6,670 | TRANS NPN 400V 8A D2PAK |
| FJB3307DTM | Fairchild Semiconductor | 6,670 | TRANS NPN 400V 8A D2PAK |
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