FJBE2150DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Emitter Base Voltage (VEBO) :

12V

HTS Code :

8541.29.00.95

Mount :

Surface Mount

Transition Frequency :

5MHz

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

800V

Max Collector Current :

2A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

Packaging :

Tube

ECCN Code :

EAR99

Max Power Dissipation :

110W

Current - Collector Cutoff (Max) :

100μA

Series :

ESBC™

Transistor Type :

NPN

Number of Terminations :

2

Vce Saturation (Max) @ Ib, Ic :

250mV @ 330mA, 1A

Length :

10.67mm

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

hFE Min :

20

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

1.5kV

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 400mA 3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

800V

Number of Pins :

3

Lead Free :

Lead Free

Power - Max :

110W

Published :

2015

Collector Emitter Saturation Voltage :

250mV

Mounting Type :

Surface Mount

Width :

9.85mm

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Gain Bandwidth Product :

5MHz

Radiation Hardening :

No

Operating Temperature :

-55°C~125°C TJ

Terminal Finish :

Tin (Sn)

Height :

4.83mm

Weight :

1.88g

Element Configuration :

Single

Pbfree Code :

yes

JESD-609 Code :

e3