FJP5027OTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Current Rating :

3A

RoHS Status :

ROHS3 Compliant

hFE Min :

10

Vce Saturation (Max) @ Ib, Ic :

2V @ 300mA, 1.5A

Max Collector Current :

3A

Max Power Dissipation :

50W

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

1.1kV

Lead Free :

Lead Free

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

800V

Weight :

1.8g

Factory Lead Time :

24 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tube

Published :

2011

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

800V

Mounting Type :

Through Hole

Transition Frequency :

15MHz

Number of Pins :

3

Package / Case :

TO-220-3

Current - Collector Cutoff (Max) :

10μA ICBO

ECCN Code :

EAR99

Pbfree Code :

yes

Base Part Number :

FJP5027

JESD-609 Code :

e3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

7V

Power Dissipation :

50W

Number of Terminations :

3

Voltage - Rated DC :

800V

JEDEC-95 Code :

TO-220AB

Gain Bandwidth Product :

15MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 200mA 5V

Frequency :

15MHz

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Operating Temperature :

150°C TJ

Transistor Type :

NPN