FJP5027RTU
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- Mfr.Part #
- FJP5027RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220-3
- Stock
- 76,149
- In Stock ：
- 76,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 1.1kV
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Voltage (VCEO) :
- 800V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Power Dissipation :
- 50W
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 3A
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 15MHz
- Packaging :
- Tube
- Transition Frequency :
- 15MHz
- Height :
- 15.7mm
- Width :
- 4.5mm
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 7V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 200mA 5V
- Max Power Dissipation :
- 50W
- Published :
- 2003
- Transistor Application :
- SWITCHING
- Base Part Number :
- FJP5027
- hFE Min :
- 10
- Pbfree Code :
- yes
- Length :
- 9.9mm
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Frequency :
- 15MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 800V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Factory Lead Time :
- 4 Weeks
- Current Rating :
- 3A
- Weight :
- 1.8g
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 800V
- Transistor Element Material :
- SILICON
- Datasheets
- FJP5027RTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP5027RTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 15MHz.During maximum operation, collector current can be as low as 3A volts.
FJP5027RTU Features
the DC current gain for this device is 15 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJP5027RTU Applications
There are a lot of ON Semiconductor
FJP5027RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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