FQA16N25C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

53.5nC @ 10V

Avalanche Energy Rating (Eas) :

410 mJ

Current - Continuous Drain (Id) @ 25°C :

17.8A Tc

Peak Reflow Temperature (Cel) :

Not Applicable

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

270m Ω @ 8.9A, 10V

Power Dissipation-Max :

180W Tc

Packaging :

Tube

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

250V

Input Capacitance (Ciss) (Max) @ Vds :

1.08pF @ 25V

Number of Elements :

1

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Terminal Position :

Single

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

250V

Pbfree Code :

yes

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

71.2A

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

17.8A

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.27Ohm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ