FQA19N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Package / Case :

TO-3P-3, SC-65-3

Supplier Device Package :

TO-3P

Packaging :

Tube

Series :

QFET®

Published :

2004

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

170mOhm @ 10.9A, 10V

Power Dissipation-Max :

180W Tc

Current - Continuous Drain (Id) @ 25°C :

21.8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

200V