FQA34N20L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3.9pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain to Source Voltage (Vdss) :

200V

Series :

QFET®

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

75m Ω @ 17A, 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Avalanche Energy Rating (Eas) :

640 mJ

DS Breakdown Voltage-Min :

200V

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

34A

Pin Count :

3

Power Dissipation-Max :

210W Tc

Transistor Element Material :

SILICON

FET Type :

N-Channel

Pbfree Code :

yes

Terminal Finish :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Package / Case :

TO-3P-3, SC-65-3

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 5V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.08Ohm

Pulsed Drain Current-Max (IDM) :

136A