FQA34N20L
- Mfr.Part #
- FQA34N20L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 34A TO3P
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Drain Current-Max (Abs) (ID) :
- 34A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.9pF @ 25V
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 200V
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 17A, 10V
- Series :
- QFET®
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-3P-3, SC-65-3
- Drain-source On Resistance-Max :
- 0.08Ohm
- Qualification Status :
- COMMERCIAL
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Power Dissipation-Max :
- 210W Tc
- Pulsed Drain Current-Max (IDM) :
- 136A
- Surface Mount :
- No
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 640 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Pbfree Code :
- yes
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 200V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Datasheets
- FQA34N20L

N-Channel Tube 75m Ω @ 17A, 10V ±20V 3.9pF @ 25V 72nC @ 5V 200V TO-3P-3, SC-65-3
FQA34N20L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 640 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3.9pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 34A.Peak drain current is 136A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
FQA34N20L Features
the avalanche energy rating (Eas) is 640 mJ
based on its rated peak drain current 136A.
a 200V drain to source voltage (Vdss)
FQA34N20L Applications
There are a lot of Rochester Electronics, LLC
FQA34N20L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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