FQD5P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Fall Time (Typ) :

30 ns

Voltage - Rated DC :

-100V

Published :

1999

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Voltage :

100V

Threshold Voltage :

-2V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta 25W Tc

Current Rating :

-3.6A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

-100V

Power Dissipation :

2.5W

Contact Plating :

Tin

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Rise Time :

70ns

Current :

36A

Width :

6.22mm

Packaging :

Tape and Reel (TR)

Length :

6.73mm

Turn-Off Delay Time :

12 ns

Lead Free :

Lead Free

Number of Pins :

3

Avalanche Energy Rating (Eas) :

55 mJ

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3.6A

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 1.8A, 10V

Radiation Hardening :

No

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

P-Channel

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Vgs (Max) :

±30V

Series :

QFET®

REACH SVHC :

No SVHC

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Height :

2.39mm

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

9 ns