FQP8N90C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

25A

Terminal Finish :

Tin (Sn)

Rise Time :

110ns

Avalanche Energy Rating (Eas) :

850 mJ

Turn-Off Delay Time :

70 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Pins :

3

ECCN Code :

EAR99

Number of Elements :

1

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

900V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Mount :

Through Hole

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Peak Reflow Temperature (Cel) :

260

Published :

2013

Drain to Source Breakdown Voltage :

900V

Current Rating :

6.3A

Continuous Drain Current (ID) :

6.3A

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Series :

QFET®

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.15A, 10V

Number of Terminations :

3

Turn On Delay Time :

40 ns

Factory Lead Time :

5 Weeks

Weight :

1.8g

Pbfree Code :

yes

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

171W

Radiation Hardening :

No

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Power Dissipation-Max :

171W Tc

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Fall Time (Typ) :

70 ns

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc