FQP8P10

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Factory Lead Time :

4 Weeks

Width :

4.7mm

Drain to Source Voltage (Vdss) :

100V

Turn On Delay Time :

11 ns

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

Through Hole

Rise Time :

110ns

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Series :

QFET®

Packaging :

Tube

Nominal Vgs :

-4 V

Continuous Drain Current (ID) :

8A

Published :

2002

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Mount :

Through Hole

Dual Supply Voltage :

-100V

Drain Current-Max (Abs) (ID) :

8A

Package / Case :

TO-220-3

Current Rating :

-8A

Number of Elements :

1

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

530m Ω @ 4A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

-100V

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Number of Terminations :

3

Height :

16.3mm

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Weight :

1.8g

Length :

10.67mm

Power Dissipation :

65W

JESD-609 Code :

e3

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Power Dissipation-Max :

65W Tc

Turn-Off Delay Time :

20 ns

Transistor Application :

SWITCHING

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-100V

Fall Time (Typ) :

35 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)