FSB560A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

500mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Width :

1.4mm

Max Collector Current :

2A

Number of Elements :

1

Max Breakdown Voltage :

25V

Height :

940μm

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

500mW

Collector Emitter Saturation Voltage :

300mV

Published :

2008

Length :

2.92mm

Factory Lead Time :

24 Weeks

Voltage - Rated DC :

60V

Frequency :

75MHz

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

75MHz

Transition Frequency :

75MHz

Collector Emitter Breakdown Voltage :

60V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Current Rating :

2A

Radiation Hardening :

No

hFE Min :

250

JESD-609 Code :

e3

Base Part Number :

FSB560

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Lead Free :

Lead Free

Weight :

30mg

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

60V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

80V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Transistor Type :

NPN