G1003B

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

130mOhm @ 1A, 10V

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

760 pF @ 50 V

Current - Continuous Drain (Id) @ 25°C :

3A

Mounting Type :

Surface Mount

Supplier Device Package :

SOT-23-3L

Power Dissipation (Max) :

3.3W

Vgs (Max) :

±20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Series :

-

Drain to Source Voltage (Vdss) :

100 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Vgs(th) (Max) @ Id :

2V @ 250μA

Technology :

MOSFET (Metal Oxide)