HFA3096B

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminations :

16

Polarity :

NPN, PNP

Height :

1.75mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Emitter Base Voltage (VEBO) :

5.5V

Collector Base Voltage (VCBO) :

12V

Package / Case :

16-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation :

150mW

Transition Frequency :

8000MHz

Transistor Type :

3 NPN + 2 PNP

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 2V / 20 @ 10mA 2V

Transistor Element Material :

SILICON

Published :

2000

Terminal Position :

Dual

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

3.5dB @ 1GHz

Voltage - Collector Emitter Breakdown (Max) :

12V 15V

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Number of Elements :

5

Additional Feature :

LOW NOISE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

8V

Frequency - Transition :

8GHz 5.5GHz

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G16

ECCN Code :

EAR99

Base Part Number :

HFA3096

JEDEC-95 Code :

MS-012AC

Collector Emitter Saturation Voltage :

300mV

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Max Junction Temperature (Tj) :

150°C

Current - Collector (Ic) (Max) :

65mA

Pin Count :

16

Max Collector Current :

37mA