HUF75345S3ST
- Mfr.Part #
- HUF75345S3ST
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A D2PAK
- Stock
- 14,549
- In Stock :
- 14,549
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 75A
- Vgs (Max) :
- ±20V
- Weight :
- 1.31247g
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 7mOhm
- Published :
- 1999
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 14 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 26 ns
- Power Dissipation-Max :
- 325W Tc
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Series :
- UltraFET™
- Turn-Off Delay Time :
- 42 ns
- Continuous Drain Current (ID) :
- 75A
- Rise Time :
- 118ns
- Voltage - Rated DC :
- 55V
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 55V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Power Dissipation :
- 325W
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 275nC @ 20V
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 75A, 10V
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Datasheets
- HUF75345S3ST

N-Channel Tape & Reel (TR) 7m Ω @ 75A, 10V ±20V 4000pF @ 25V 275nC @ 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75345S3ST Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4000pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
HUF75345S3ST Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 42 ns
HUF75345S3ST Applications
There are a lot of ON Semiconductor
HUF75345S3ST applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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