HUF75545S3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

1.31247g

JESD-30 Code :

R-PSSO-G2

Rise Time :

125ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

10m Ω @ 75A, 10V

Series :

UltraFET™

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

235nC @ 20V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

6 Weeks

Pbfree Code :

yes

Number of Terminations :

2

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

40 ns

Fall Time (Typ) :

90 ns

Threshold Voltage :

4V

Terminal Form :

Gull wing

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

75A

Vgs (Max) :

±20V

Resistance :

10MOhm

Peak Reflow Temperature (Cel) :

245

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Element Configuration :

Single

Mount :

Surface Mount

Power Dissipation-Max :

270W Tc

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3750pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

ECCN Code :

EAR99

Turn On Delay Time :

14 ns

Current Rating :

75A

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

REACH SVHC :

No SVHC

Voltage - Rated DC :

80V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

80V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

270W