IKB40N65EF5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Series :

TrenchStop™ 5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

Trench Field Stop

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

160A

Td (on/off) @ 25°C :

22ns/160ns

Switching Energy :

420μJ (on), 100μJ (off)

Current - Collector (Ic) (Max) :

74A

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Voltage - Collector Emitter Breakdown (Max) :

650V

Test Condition :

400V, 40A, 15 Ω, 15V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power - Max :

250W

Number of Terminations :

2

Turn On Time :

57 ns

Gate Charge :

95nC

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

Operating Temperature :

-40°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Reverse Recovery Time :

83ns

Factory Lead Time :

26 Weeks

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Input Type :

Standard

Turn Off Time-Nom (toff) :

199 ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 40A

Terminal Position :

Single

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount