IRF540NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

39 ns

REACH SVHC :

No SVHC

Element Configuration :

Single

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

44m Ω @ 16A, 10V

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Power Dissipation-Max :

130W Tc

Vgs (Max) :

±20V

Lead Pitch :

2.54mm

Mounting Type :

Through Hole

Rise Time :

35ns

FET Type :

N-Channel

Height :

8.77mm

Lead Free :

Lead Free

Published :

1997

Series :

HEXFET®

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

100V

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

35 ns

Nominal Vgs :

4 V

Dual Supply Voltage :

100V

Current Rating :

27A

Power Dissipation :

130W

Termination :

Through Hole

Width :

4.69mm

Contact Plating :

Tin

ECCN Code :

EAR99

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Length :

10.54mm

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

250

Resistance :

44mOhm

Packaging :

Tube

JESD-609 Code :

e3

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

33A

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Radiation Hardening :

No

Additional Feature :

High Reliability

Number of Elements :

1

Recovery Time :

170 ns

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Number of Pins :

3