IRF540Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

JESD-30 Code :

R-PSIP-T3

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

92W Tc

Drain-source On Resistance-Max :

0.0265Ohm

Avalanche Energy Rating (Eas) :

120 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

36A

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

225

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

140A

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Single

Surface Mount :

No

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

JESD-609 Code :

e0