IRF6721STRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 14A, 10V

Turn-Off Delay Time :

9.3 ns

Continuous Drain Current (ID) :

14A

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Number of Pins :

4

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

62 mJ

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

2.2W Ta 42W Tc

Published :

2007

Operating Temperature :

-40°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

42W

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0073Ohm

Height :

506μm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Terminal Position :

BOTTOM

Rise Time :

8.9ns

Width :

3.95mm

Mounting Type :

Surface Mount

Fall Time (Typ) :

5.3 ns

Package / Case :

DirectFET™ Isometric SQ

Transistor Element Material :

SILICON

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 15V

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

JESD-30 Code :

R-XBCC-N2

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current - Continuous Drain (Id) @ 25°C :

14A Ta 60A Tc

Mount :

Surface Mount

Turn On Delay Time :

7.8 ns

Case Connection :

DRAIN

Length :

4.826mm

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)