IRFBF20LPBF
- Mfr.Part #
- IRFBF20LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 1.7A I2PAK
- Stock
- 1,840
- In Stock :
- 1,840
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.67mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 3.1W
- Rds On (Max) @ Id, Vgs :
- 8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 3.1W Ta 54W Tc
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 8 ns
- Packaging :
- Tube
- Fall Time (Typ) :
- 32 ns
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 8Ohm
- Turn-Off Delay Time :
- 56 ns
- Width :
- 4.83mm
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 8 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2017
- Continuous Drain Current (ID) :
- 1.7A
- Rise Time :
- 21ns
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Weight :
- 2.387001g
- Max Operating Temperature :
- 150°C
- Height :
- 9.65mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Drain to Source Breakdown Voltage :
- 900V
- Resistance :
- 8Ohm
- Element Configuration :
- Single
- Input Capacitance :
- 490pF
- Drain to Source Voltage (Vdss) :
- 900V
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- FET Type :
- N-Channel
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package :
- I2PAK
- Mounting Type :
- Through Hole
- Datasheets
- IRFBF20LPBF

N-Channel Tube 8Ohm @ 1A, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFBF20LPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 490pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.7A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 8Ohm.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFBF20LPBF Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 56 ns
single MOSFETs transistor is 8Ohm
a 900V drain to source voltage (Vdss)
IRFBF20LPBF Applications
There are a lot of Vishay Siliconix
IRFBF20LPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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