IRFD010PBF

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Mfr.Part #
IRFD010PBF
Manufacturer
Vishay
Package / Case
4-DIP (0.300, 7.62mm)
Datasheet
Download
Description
MOSFET N-CH 50V 1.7A 4DIP
Stock
4,967
In Stock :
4,967

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Input Capacitance :
250pF
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Published :
2000
Current - Continuous Drain (Id) @ 25°C :
1.7A Tc
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
50V
Rds On (Max) @ Id, Vgs :
200mOhm @ 860mA, 10V
Fall Time (Typ) :
23 ns
Lead Free :
Lead Free
REACH SVHC :
Unknown
Vgs (Max) :
±20V
Rds On Max :
200 mΩ
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Power Dissipation-Max :
1W Tc
Power Dissipation :
1W
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
50V
Packaging :
Tube
Min Operating Temperature :
-55°C
Turn-Off Delay Time :
12 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Rise Time :
33ns
Max Operating Temperature :
150°C
Continuous Drain Current (ID) :
1.7A
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Drain to Source Resistance :
200mOhm
Number of Pins :
4
Threshold Voltage :
4V
Factory Lead Time :
111 Weeks
Package / Case :
4-DIP (0.300, 7.62mm)
Resistance :
200mOhm
Operating Temperature :
-55°C~150°C TJ
Datasheets
IRFD010PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFD010PBF from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:4, Package / Case:4-DIP (0.300, 7.62mm), Operating Temperature:-55°C~150°C TJ, IRFD010PBF pinout, IRFD010PBF datasheet PDF, IRFD010PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFD010PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFD010PBF


N-Channel Tube 200mOhm @ 860mA, 10V ±20V 250pF @ 25V 13nC @ 10V 50V 4-DIP (0.300, 7.62mm)

IRFD010PBF Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 250pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.7A.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 200mOhm exists between the drain and source.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 50V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFD010PBF Features


a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 50V drain to source voltage (Vdss)


IRFD010PBF Applications


There are a lot of Vishay Siliconix
IRFD010PBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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