IRFD110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

540m Ω @ 600mA, 10V

Row Spacing :

7.62 mm

Pin Count :

4

Nominal Vgs :

4 V

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

4

ECCN Code :

EAR99

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Continuous Drain Current (ID) :

1A

Current Rating :

1A

Threshold Voltage :

4V

Fall Time (Typ) :

16 ns

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

15 ns

Vgs (Max) :

±20V

Recovery Time :

200 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

16ns

Mount :

Through Hole

Lead Free :

Lead Free

Mounting Type :

Through Hole

Max Junction Temperature (Tj) :

175°C

FET Type :

N-Channel

Number of Elements :

1

REACH SVHC :

Unknown

Height :

4.57mm

Dual Supply Voltage :

100V

Turn On Delay Time :

6.9 ns

Package / Case :

4-DIP (0.300, 7.62mm)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Resistance :

540mOhm

Transistor Element Material :

SILICON

Lead Pitch :

2.54mm

JESD-30 Code :

R-PDIP-T3

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Width :

6.29mm

Drain Current-Max (Abs) (ID) :

1A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Published :

2008

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

100V

Power Dissipation :

1.3W

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Power Dissipation-Max :

1.3W Ta