IRFF332

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

Round

Number of Terminals :

3

Power Dissipation-Max (Abs) :

25 W

Number of Elements :

1

Terminal Position :

BOTTOM

Drain to Source Voltage (Vdss) :

400 V

Operating Temperature :

-

Polarity/Channel Type :

N-Channel

Surface Mount :

No

JESD-30 Code :

O-MBCY-W3

Transistor Element Material :

SILICON

Package :

Bulk

Manufacturer :

International Rectifier

Rds On (Max) @ Id, Vgs :

-

DS Breakdown Voltage-Min :

400 V

JEDEC-95 Code :

TO-205AF

Terminal Form :

Wire

FET Feature :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

JESD-609 Code :

e0

Drain Current-Max (Abs) (ID) :

3 A

Package / Case :

TO-205AF Metal Can

Qualification Status :

Not Qualified

Product Status :

Active

Power Dissipation (Max) :

25W

Subcategory :

FET General Purpose Power

FET Type :

N-Channel

Vgs (Max) :

-

Drain-source On Resistance-Max :

1.5 Ω

Current - Continuous Drain (Id) @ 25°C :

3A

Vgs(th) (Max) @ Id :

-

Drive Voltage (Max Rds On, Min Rds On) :

-

Operating Mode :

ENHANCEMENT MODE

Series :

-

Terminal Finish :

Tin/Lead (Sn/Pb)

Pulsed Drain Current-Max (IDM) :

12 A

Supplier Device Package :

TO-205AF (TO-39)

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown